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Ferroelectric oxide films
for energy and memory devices

SCOPE

Ferroelectric oxide films for energy and memory devices group (FOXEM) aims to develop high quality new ferroelectric materials compatible with industry to study their properties from a fundamental to a device level. Electronics Industry is facing several bottlenecks to sustain the increasing demand and necessity of new data storage, computation and communication devices. New materials are needed and CMOS-compatible ferroelectrics based in HfO2 are in the spotlight. We investigate epitaxial oxide thin films of these oxides as model systems to understand and improve the ferroelectric properties. Our activities involve growth, structural studies, advanced characterization of electrical properties and prototyping of conventional and emerging memory devices.

SELECTED WORKS

Seeing ferroelectric phase transitions

I. Fina, and F. Sánchez, Seeing ferroelectric phase transitions. Nature Materials 23 (8), 1015-1016 (2024). https://doi.org/10.1038/s41563-024-01930-z

Disentangling stress and strain effects in ferroelectric HfO2

T. Song, V. Lenzi, J.P.B. Silva, L. Marques, I. Fina, F. Sánchez, Disentangling stress and strain effects in ferroelectric HfO2. Appl. Phys. Rev. 10, 041415 (2023). https://doi.org/10.1063/5.0172259

Photovoltaic-driven dual optical writing and non-destructive voltage-less reading of polarization in ferroelectric Hf0.5Zr0.5O2 for energy efficient memory devices.

H. Tan, A. Quintana, N. Dix, S. Estandía, J. Sort, F. Sánchez, I. Fina. Photovoltaic-driven dual optical writing and non-destructive voltage-less reading of polarization in ferroelectric Hf0.5Zr0.5O2 for energy efficient memory devices. Nano Energy 123, 109384 (2024). https://doi.org/10.1016/j.nanoen.2024.109384